DIODE GEN PURP 200V 1A DO41 PR1003G-T
The pictures are for reference only
Description:
DIODE GEN PURP 200V 1A DO41
Contact Us
Parameters
Capacitance at different Vr and F
Current - reverse leakage at different Vr
Current average rectification (Io)
Reverse recovery time (trr)
Rapid recovery=< 500ns,> 200mA(Io)
Supplier device packaging
Voltage DC reverse (Vr) (maximum)
Voltage at different If - forward (Vf)
DataSheet
PR1003G-T(Diode rectifier)ByDiodesDesign and production, ICQQG Electronic component purchase website provides sufficient inventory56120,Price reference "real-time change" China/Hongkong。 PR1003G-T package/specs, Download PR1003G-T、Datasheet。